It is generally considered that for high voltage/high current applications (900V/100A), vertical device structures might be more suitable owing to their capability of achieving lower specific on-resistance and high breakdown voltage simultaneously. For high-power conversion application, devices with vertical geometry are preferred over lateral geometry, since the former allows more current for a given chip area, therefore making it more economical and feasible solution for high-voltage and high-current application. Gallium nitride (GaN)-based devices have entered the power electronics market and are showing excellent progress in the medium power conversion application -. Japan-based power semiconductor maker ROHM Co Ltd has begun mass production of the 650V gallium nitride (GaN) high-electron-mobility transistors (HEMTs) GNP1070TC-Z and GNP1150TCA-Z, which are optimized for a wide range of power supply systems in industrial equipment and consumer devices, including servers and AC adapters. TCAD Simulation of GaN-based Vertical FETs (HEMTs)
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